IXKR25N80C specifications -Ameya360 electronic components purchase network


IXKR25N80C

ACTIVE EAR99
Product description : Single N-Channel 800 V 125 mOhm Power MOSFET - ISOPLUS247
SPQ：30
Datasheet : IXKR25N80C.pdf

Width:	5.21 mm (Max)
Rds On - Drain-Source Resistance:	125 mOhms
Minimum Operating Temperature:	- 40 C
Technology:	Si
Package / Case:	TO-247-3
Height:	21.34 mm (Max)
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	6 ns
Length:	16.13 mm (Max)
Series:	IXKR25N80
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	25 A
Rise Time:	15 ns
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Qg - Gate Charge:	180 nC
Pd - Power Dissipation:	250 W
Tradename:	COOLMOS
Vgs th - Gate-Source Threshold Voltage:	4 V
Configuration:	Single
Unit Weight:	0.056438 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	25 ns
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	72 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	800 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXKR25N80C.pdf

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Stock code :	561917
Mfg name :	IXYS Corporation
MPN :	IXKR25N80C
Product description :	Single N-Channel 800 V 125 mOhm Power MOSFET - ISOPLUS247

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