IXFX520N075T2 specifications -Ameya360 electronic components purchase network


IXFX520N075T2

ACTIVE EAR99
Product description : MOSFET N-CH 75V 520A PLUS247
SPQ：30
Datasheet : IXFX520N075T2.pdf

Width:	5.21 mm
Rds On - Drain-Source Resistance:	2.2 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-247-3
Height:	21.34 mm
Unit Weight:	0.056438 oz
Fall Time:	35 ns
Length:	16.13 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	80 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	75 V
Type:	TrenchT2 GigaMOS HiperFET Power MOSFET
ECCN	EAR99
Packaging:	Tube
Qg - Gate Charge:	545 nC
Pd - Power Dissipation:	1.25 kW
Tradename:	TrenchT2, GigaMOS, HiperFET
Vgs th - Gate-Source Threshold Voltage:	5 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Typical Turn-On Delay Time:	48 ns
Forward Transconductance - Min:	65 S
Series:	IXFX520N075
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	520 A
Rise Time:	36 ns
Maximum Operating Temperature:	+ 175 C

Datasheet： IXFX520N075T2.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：