IXFR180N15P
IXFR180N15P
  • 量产中
  • EAR99
产品描述:
Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
标准包装:1
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Width: 5.21 mm
Rds On - Drain-Source Resistance: 13 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-247-3
Height: 21.34 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: Through Hole
Fall Time: 36 ns
Length: 16.13 mm
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 150 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 150 V
Type: PolarHV HiPerFET Power MOSFET
Maximum Operating Temperature: + 175 C
Packaging: Tube
Qg - Gate Charge: 240 nC
Pd - Power Dissipation: 300 W
Tradename: PolarHV, ISOPLUS247, HiPerFET
Vgs th - Gate-Source Threshold Voltage: 5 V
Configuration: Single
Unit Weight: 0.056438 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 30 ns
Forward Transconductance - Min: 55 S
Series: IXFR180N15
Factory Pack Quantity: 30
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: 100 A
Rise Time: 32 ns
Transistor Type: 1 N-Channel
ECCN EAR99
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