IXFR180N15P specifications -Ameya360 electronic components purchase network


IXFR180N15P

ACTIVE EAR99
Product description : Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
SPQ：1
Datasheet : IXFR180N15P.pdf

Width:	5.21 mm
Rds On - Drain-Source Resistance:	13 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-247-3
Height:	21.34 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	36 ns
Length:	16.13 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	150 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	150 V
Type:	PolarHV HiPerFET Power MOSFET
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Qg - Gate Charge:	240 nC
Pd - Power Dissipation:	300 W
Tradename:	PolarHV, ISOPLUS247, HiPerFET
Vgs th - Gate-Source Threshold Voltage:	5 V
Configuration:	Single
Unit Weight:	0.056438 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	30 ns
Forward Transconductance - Min:	55 S
Series:	IXFR180N15
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	100 A
Rise Time:	32 ns
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXFR180N15P.pdf

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Stock code :	561718
Mfg name :	IXYS Corporation
MPN :	IXFR180N15P
Product description :	Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns

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