IXFN82N60Q3 | ||
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产品描述:
N-Channel 600 V 66 A 75 mOhm Surface Mount HiperFET Power MOSFET - SOT-227B
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标准包装:10 | ||
数据手册: |
Number of Channels: | 1 Channel |
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Rds On - Drain-Source Resistance: | 75 mOhms |
Manufacturer: | IXYS |
Pd - Power Dissipation: | 960 W |
Factory Pack Quantity: | 10 |
Brand: | IXYS |
RoHS: | Details |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Configuration: | Single |
Unit Weight: | 1.340411 oz |
Mounting Style: | SMD/SMT |
Packaging: | Tube |
Qg - Gate Charge: | 275 nC |
Series: | IXFN82N60 |
Transistor Polarity: | N-Channel |
Technology: | Si |
Tradename: | HyperFET |
Package / Case: | SOT-227-4 |
Id - Continuous Drain Current: | 66 A |
Rise Time: | 300 ns |
Vgs - Gate-Source Voltage: | 30 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
数据手册: |
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