IXFN82N60Q3
IXFN82N60Q3
  • 量产中
  • EAR99
产品描述:
N-Channel 600 V 66 A 75 mOhm Surface Mount HiperFET Power MOSFET - SOT-227B
标准包装:10
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Number of Channels: 1 Channel
Rds On - Drain-Source Resistance: 75 mOhms
Manufacturer: IXYS
Pd - Power Dissipation: 960 W
Factory Pack Quantity: 10
Brand: IXYS
RoHS:  Details
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 600 V
Configuration: Single
Unit Weight: 1.340411 oz
Mounting Style: SMD/SMT
Packaging: Tube
Qg - Gate Charge: 275 nC
Series: IXFN82N60
Transistor Polarity: N-Channel
Technology: Si
Tradename: HyperFET
Package / Case: SOT-227-4
Id - Continuous Drain Current: 66 A
Rise Time: 300 ns
Vgs - Gate-Source Voltage: 30 V
Transistor Type: 1 N-Channel
ECCN EAR99
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库存信息2到货提醒

供应商库存

线下原厂及原厂授权代理商库存,接单后需要再次确认价格和数量

库存数量210库存更新于
2025-07-08
订货周期--
SPQ/MOQ10/10
库存地--
生产批次2446

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