IXFN82N60P specifications -Ameya360 electronic components purchase network


IXFN82N60P

ACTIVE EAR99
Product description : Module; single transistor; 600V; 72A; SOT227B; Ugs: ±40V; screw
SPQ：1
Datasheet : IXFN82N60P.pdf

Width:	25.42 mm
Rds On - Drain-Source Resistance:	75 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	SOT-227-4
Height:	12.22 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	SMD/SMT
Fall Time:	24 ns
Length:	38.23 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	79 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	600 V
Type:	Polar HiPerFET Power MOSFET
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Qg - Gate Charge:	240 nC
Pd - Power Dissipation:	1.04 kW
Tradename:	Polar, HiPerFET
Vgs th - Gate-Source Threshold Voltage:	5 V
Configuration:	Single Dual Source
Unit Weight:	1.340411 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	28 ns
Forward Transconductance - Min:	50 S
Series:	IXFN82N60
Factory Pack Quantity:	10
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	72 A
Rise Time:	23 ns
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXFN82N60P.pdf

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Stock code :	561688
Mfg name :	IXYS Corporation
MPN :	IXFN82N60P
Product description :	Module; single transistor; 600V; 72A; SOT227B; Ugs: ±40V; screw

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