| IXFN64N60P | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Single N-Channel 600 Vds 50 A 96 mOhm Power Mosfet - SOT-227B
|
||
| 标准包装：10 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Width: | 25.07 mm |
|---|---|
| Rds On - Drain-Source Resistance: | 96 mOhms |
| Pd - Power Dissipation: | 700 W |
| Tradename: | HyperFET |
| Height: | 9.6 mm |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 24 ns |
| Length: | 38.2 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 79 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Tube |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | SOT-227-4 |
| Configuration: | Single Dual Source |
| Unit Weight: | 1.340411 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 28 ns |
| Forward Transconductance - Min: | 63 S |
| Series: | IXFN64N60 |
| Factory Pack Quantity: | 10 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 50 A |
| Rise Time: | 23 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：