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| 产品描述：
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B
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| 标准包装：10 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | SOT-227-4, miniBLOC |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 360A |
| Part Status | Active |
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 2.6 mOhm @ 180A, 10V |
| Power - Max | 830W |
| Supplier Device Package | SOT-227B |
| Gate Charge (Qg) @ Vgs | 505nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Chassis Mount |
| Input Capacitance (Ciss) @ Vds | 36000pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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