| IXFN230N20T | ||
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| 产品描述：
Module; single transistor; 200V; 220A; SOT227B; Ugs: ±30V; screw
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| 标准包装：1 | ||
| 数据手册： |
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| Width: | 25.42 mm |
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| Rds On - Drain-Source Resistance: | 7.5 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | SOT-227-4 |
| Height: | 12.22 mm |
| Unit Weight: | 1.340411 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 41 ns |
| Forward Transconductance - Min: | 100 S |
| Series: | IXFN230N20 |
| Factory Pack Quantity: | 10 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 230 A |
| Rise Time: | 35 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 378 nC |
| Pd - Power Dissipation: | 1.09 kW |
| Tradename: | GigaMOS |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 29 ns |
| Length: | 38.23 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 104 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Type: | GigaMOS Power MOSFET |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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