IXFN210N20P
IXFN210N20P
  • 量产中
  • EAR99
产品描述:
Single N-Channel 200 V 1070 W 255 nC Polar HyPerFET Mosfet - TO-227B
标准包装:10
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Number of Channels: 1 Channel
Rds On - Drain-Source Resistance: 10.5 mOhms
Series: IXFN210N20
Pd - Power Dissipation: 1.07 kW
Factory Pack Quantity: 10
Brand: IXYS
RoHS:  Details
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs - Gate-Source Voltage: 20 V
Transistor Type: 1 N-Channel
Maximum Operating Temperature: + 175 C
Packaging: Tube
Manufacturer: IXYS
Minimum Operating Temperature: - 55 C
Transistor Polarity: N-Channel
Technology: Si
Tradename: HyperFET
Package / Case: SOT-227-4
Id - Continuous Drain Current: 188 A
Configuration: Single
Unit Weight: 1.340411 oz
Mounting Style: SMD/SMT
ECCN EAR99
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