IXFN200N10P
  • 量产中
  • EAR99
产品描述:
Single N-Channel 100 V 680 W 235 nC Chassis Mount Power Mosfet - SOT227B
标准包装:1
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Width: 25.42 mm
Rds On - Drain-Source Resistance: 7.5 mOhms
Pd - Power Dissipation: 680 W
Tradename: HyperFET
Height: 9.6 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 90 ns
Length: 38.23 mm
Series: IXFN200N10
Factory Pack Quantity: 10
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: 200 A
Rise Time: 35 ns
Maximum Operating Temperature: + 175 C
Packaging: Tube
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: SOT-227-4
Configuration: Single Dual Source
Unit Weight: 1.340411 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 30 ns
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 150 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 100 V
Transistor Type: 1 N-Channel
ECCN EAR99
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库存信息3到货提醒

供应商编码:SP1034

线下原厂及原厂授权代理商库存,接单后需要再次确认价格和数量

$27.7354

230.36047

1+$27.7354
3+$27.1516
5+$26.3368
库存数量54库存更新于
2025-09-10
订货周期--
Supplier SPQ/MOQ1/1
库存地--
生产批次--

供应商编码:SP1034

线下原厂及原厂授权代理商库存,接单后需要再次确认价格和数量

$34.77544

288.83256

10+$34.77544
50+$31.29784
库存数量160库存更新于
2025-09-10
订货周期--
Supplier SPQ/MOQ1/10
库存地--
生产批次--

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