IXFN200N10P | ||
---|---|---|
|
||
|
||
产品描述:
Single N-Channel 100 V 680 W 235 nC Chassis Mount Power Mosfet - SOT227B
|
||
标准包装:1 | ||
数据手册: |
Width: | 25.42 mm |
---|---|
Rds On - Drain-Source Resistance: | 7.5 mOhms |
Pd - Power Dissipation: | 680 W |
Tradename: | HyperFET |
Height: | 9.6 mm |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | SMD/SMT |
Fall Time: | 90 ns |
Length: | 38.23 mm |
Series: | IXFN200N10 |
Factory Pack Quantity: | 10 |
Brand: | IXYS |
RoHS: | Details |
Id - Continuous Drain Current: | 200 A |
Rise Time: | 35 ns |
Maximum Operating Temperature: | + 175 C |
Packaging: | Tube |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | SOT-227-4 |
Configuration: | Single Dual Source |
Unit Weight: | 1.340411 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 30 ns |
Manufacturer: | IXYS |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 150 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
数据手册: |
---|
供应商编码:SP1034
线下原厂及原厂授权代理商库存,接单后需要再次确认价格和数量
1+ | $27.7354 |
---|---|
3+ | $27.1516 |
5+ | $26.3368 |
库存数量 | 54 | 库存更新于 2025-09-10 |
---|---|---|
订货周期 | -- | |
Supplier SPQ/MOQ | 1/1 | |
库存地 | -- | |
生产批次 | -- |
请输入下方图片中的验证码: