IXFN180N15P
IXFN180N15P
  • 量产中
  • EAR99
产品描述:
Module; single transistor; 150V; 150A; SOT227B; Ugs: ±30V; screw
标准包装:1
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Width: 25.42 mm
Rds On - Drain-Source Resistance: 11 mOhms
Pd - Power Dissipation: 680 W
Tradename: HyperFET
Height: 9.6 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 36 ns
Length: 38.23 mm
Series: IXFN180N15
Factory Pack Quantity: 10
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: 150 A
Rise Time: 32 ns
Maximum Operating Temperature: + 175 C
Packaging: Tube
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: SOT-227-4
Configuration: Single Dual Source
Unit Weight: 1.340411 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 30 ns
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 150 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 150 V
Transistor Type: 1 N-Channel
ECCN EAR99
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