IXFN132N50P3
  • 量产中
  • EAR99
产品描述:
Single N-Channel 500 V 1500 W 267 nC Chassis Mount Power Mosfet - SOT227
标准包装:1
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Packaging: Tube
Qg - Gate Charge: 250 nC
Technology: Si
Package / Case: SOT-227-4
Configuration: Single
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Forward Transconductance - Min: 115 S, 68 S
Series: IXFN132N50
Factory Pack Quantity: 10
RoHS:  Details
Id - Continuous Drain Current: 112 A
Vds - Drain-Source Breakdown Voltage: 500 V
ECCN EAR99
Rds On - Drain-Source Resistance: 39 mOhms
Pd - Power Dissipation: 1.5 kW
Tradename: HyperFET
Vgs th - Gate-Source Threshold Voltage: 5 V
Vgs - Gate-Source Voltage: 30 V
Unit Weight: 1.340411 oz
Fall Time: 8 ns
Manufacturer: IXYS
Transistor Polarity: N-Channel
Brand: IXYS
Product Category: MOSFET
Rise Time: 9 ns
Transistor Type: 1 N-Channel
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