IXFL100N50P
  • 量产中
  • EAR99
产品描述:
Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
标准包装:25
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Width: 5.21 mm
Rds On - Drain-Source Resistance: 52 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-264-3
Height: 26.42 mm
Vgs - Gate-Source Voltage: 30 V
Mounting Style: Through Hole
Fall Time: 26 ns
Length: 20.29 mm
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 110 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 500 V
Type: PolarHV HiPerFET Power MOSFET ISOPLUS264
Maximum Operating Temperature: + 150 C
Packaging: Tube
Qg - Gate Charge: 240 nC
Pd - Power Dissipation: 625 W
Tradename: PolarHV, ISOPLUS264, HiPerFET
Vgs th - Gate-Source Threshold Voltage: 5 V
Configuration: Single
Unit Weight: 0.264555 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 36 ns
Forward Transconductance - Min: 50 S
Series: IXFL100N50
Factory Pack Quantity: 25
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: 70 A
Rise Time: 29 ns
Transistor Type: 1 N-Channel
ECCN EAR99
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