IXFL100N50P specifications -Ameya360 electronic components purchase network


IXFL100N50P

ACTIVE EAR99
Product description : Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
SPQ：25
Datasheet : IXFL100N50P.pdf

Width:	5.21 mm
Rds On - Drain-Source Resistance:	52 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-264-3
Height:	26.42 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	26 ns
Length:	20.29 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	110 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	500 V
Type:	PolarHV HiPerFET Power MOSFET ISOPLUS264
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Qg - Gate Charge:	240 nC
Pd - Power Dissipation:	625 W
Tradename:	PolarHV, ISOPLUS264, HiPerFET
Vgs th - Gate-Source Threshold Voltage:	5 V
Configuration:	Single
Unit Weight:	0.264555 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	36 ns
Forward Transconductance - Min:	50 S
Series:	IXFL100N50
Factory Pack Quantity:	25
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	70 A
Rise Time:	29 ns
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXFL100N50P.pdf

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Stock code :	561633
Mfg name :	IXYS Corporation
MPN :	IXFL100N50P
Product description :	Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™

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