| IXFK360N10T | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Packaging: | Tube |
|---|---|
| Qg - Gate Charge: | 525 nC |
| Pd - Power Dissipation: | 1.25 kW |
| Tradename: | HiPerFET |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V to 4.5 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 160 ns |
| Forward Transconductance - Min: | 180 S |
| Series: | IXFK360N10 |
| Factory Pack Quantity: | 25 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 360 A |
| Rise Time: | 100 ns |
| Maximum Operating Temperature: | + 175 C |
| Rds On - Drain-Source Resistance: | 2.9 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-264-3 |
| Configuration: | Single |
| Unit Weight: | 0.264555 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 47 ns |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 80 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：