IXFK32N100Q3 specifications -Ameya360 electronic components purchase network


IXFK32N100Q3

ACTIVE EAR99
Product description : N-Channel 1000 V 320 mOhm 195 nC 1250 W Power MOSFET - TO-264
SPQ：1
Datasheet : IXFK32N100Q3.pdf

Number of Channels:	1 Channel
Rds On - Drain-Source Resistance:	320 mOhms
Manufacturer:	IXYS
Pd - Power Dissipation:	1.25 kW
Factory Pack Quantity:	25
Brand:	IXYS
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	1000 V
Configuration:	Single
Unit Weight:	0.264555 oz
Mounting Style:	Through Hole
ECCN	EAR99
Packaging:	Tube
Qg - Gate Charge:	195 nC
Series:	IXFK32N100
Transistor Polarity:	N-Channel
Technology:	Si
Tradename:	HyperFET
Package / Case:	TO-264-3
Id - Continuous Drain Current:	32 A
Rise Time:	250 ns
Vgs - Gate-Source Voltage:	30 V
Transistor Type:	1 N-Channel
Maximum Operating Temperature:	+ 150 C

Datasheet： IXFK32N100Q3.pdf

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Stock code :	561601
Mfg name :	IXYS Corporation
MPN :	IXFK32N100Q3
Product description :	N-Channel 1000 V 320 mOhm 195 nC 1250 W Power MOSFET - TO-264

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