| IXFK220N17T2 | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; TO264
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| 标准包装：25 | ||
| 数据手册： |
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| Width: | 5.13 mm |
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| Rds On - Drain-Source Resistance: | 6.3 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-264-3 |
| Height: | 26.16 mm |
| Unit Weight: | 0.264555 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 44 ns |
| Forward Transconductance - Min: | 105 S |
| Series: | IXFK220N17 |
| Factory Pack Quantity: | 25 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 220 A |
| Rise Time: | 160 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | ECL99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 500 nC |
| Pd - Power Dissipation: | 1.25 kW |
| Tradename: | GigaMOS, HiperFET |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 150 ns |
| Length: | 19.96 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 40 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 170 V |
| Type: | GigaMOS TrenchT2 HiperFET Power MOSFET |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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