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| 产品描述：
Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-247-3 |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Part Status | Active |
| Manufacturer | IXYS |
| Series | HiPerFET™, PolarP2™ |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 420 mOhm @ 12A, 10V |
| Power - Max | 660W |
| Supplier Device Package | TO-247AD (IXFH) |
| Gate Charge (Qg) @ Vgs | 130nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 7200pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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