IXFH22N50P specifications -Ameya360 electronic components purchase network


IXFH22N50P

ACTIVE EAR99
Product description : Single N-Channel 500 V 350 W 50 nC Through Hole Power Mosfet - TO-247AD
SPQ：1
Datasheet : IXFH22N50P.pdf

Width:	5.3 mm
Rds On - Drain-Source Resistance:	270 mOhms
Pd - Power Dissipation:	350 W
Tradename:	HyperFET
Height:	21.46 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	21 ns
Length:	16.26 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	72 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	500 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-247-3
Configuration:	Single
Unit Weight:	0.229281 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	22 ns
Forward Transconductance - Min:	20 S
Series:	IXFH22N50
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	22 A
Rise Time:	25 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IXFH22N50P.pdf

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Stock code :	561517
Mfg name :	IXYS Corporation
MPN :	IXFH22N50P
Product description :	Single N-Channel 500 V 350 W 50 nC Through Hole Power Mosfet - TO-247AD

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