IXFH15N100P | ||
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产品描述:
Transistor: N-MOSFET; unipolar; 1kV; 15A; 543W; TO247-3
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标准包装:1 | ||
数据手册: |
Width: | 5.3 mm |
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Rds On - Drain-Source Resistance: | 760 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | TO-247-3 |
Height: | 21.46 mm |
Vgs - Gate-Source Voltage: | 30 V |
Mounting Style: | Through Hole |
Fall Time: | 58 ns |
Length: | 16.26 mm |
Manufacturer: | IXYS |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 44 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 1000 V |
Type: | Polar Power MOSFET HiPerFET |
Maximum Operating Temperature: | + 150 C |
Packaging: | Tube |
Qg - Gate Charge: | 97 nC |
Pd - Power Dissipation: | 543 W |
Tradename: | Polar, HiPerFET |
Vgs th - Gate-Source Threshold Voltage: | 6.5 V |
Configuration: | Single |
Unit Weight: | 0.229281 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 41 ns |
Forward Transconductance - Min: | 6.5 S |
Series: | IXFH15N100P |
Factory Pack Quantity: | 30 |
Brand: | IXYS |
RoHS: | Details |
Id - Continuous Drain Current: | 15 A |
Rise Time: | 44 ns |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
数据手册: |
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