IXFH150N15P | ||
---|---|---|
|
||
|
||
产品描述:
Transistor: N-MOSFET; unipolar; 150V; 150A; 714W; TO247-3
|
||
标准包装:30 | ||
数据手册: |
Width: | 5.3 mm |
---|---|
Rds On - Drain-Source Resistance: | 13 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | TO-247-3 |
Height: | 21.46 mm |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | Through Hole |
Fall Time: | 28 ns |
Length: | 16.26 mm |
Manufacturer: | IXYS |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 100 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 150 V |
Type: | PolarHT HiPerFET Power MOSFET |
Maximum Operating Temperature: | + 175 C |
Packaging: | Tube |
Qg - Gate Charge: | 190 nC |
Pd - Power Dissipation: | 714 W |
Tradename: | PolarHT, HiPerFET |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Configuration: | Single |
Unit Weight: | 0.229281 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 30 ns |
Forward Transconductance - Min: | 55 S |
Series: | IXFH150N15 |
Factory Pack Quantity: | 30 |
Brand: | IXYS |
RoHS: | Details |
Id - Continuous Drain Current: | 150 A |
Rise Time: | 33 ns |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
数据手册: |
---|
请输入下方图片中的验证码: