| IXFH10N100P | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
|
||
| 标准包装：30 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Width: | 5.3 mm |
|---|---|
| Rds On - Drain-Source Resistance: | 1.4 Ohms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-247-3 |
| Height: | 21.46 mm |
| Unit Weight: | 0.229281 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 38 ns |
| Forward Transconductance - Min: | 4.2 S |
| Series: | IXFH10N100P |
| Factory Pack Quantity: | 30 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 10 A |
| Rise Time: | 45 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 56 nC |
| Pd - Power Dissipation: | 380 W |
| Tradename: | Polar, HiPerFET |
| Vgs th - Gate-Source Threshold Voltage: | 6.5 V |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | Through Hole |
| Fall Time: | 75 ns |
| Length: | 16.26 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 47 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 1000 V |
| Type: | Polar HiPerFET Power MOSFET |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：