IXFB100N50Q3
  • 量产中
  • EAR99
产品描述:
Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
标准包装:1
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Number of Channels: 1 Channel
Rds On - Drain-Source Resistance: 49 mOhms
Manufacturer: IXYS
Pd - Power Dissipation: 1.56 kW
Factory Pack Quantity: 25
Brand: IXYS
RoHS:  Details
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 500 V
Configuration: Single
Unit Weight: 0.056438 oz
Mounting Style: Through Hole
Packaging: Tube
Qg - Gate Charge: 255 nC
Series: IXFB100N50
Transistor Polarity: N-Channel
Technology: Si
Tradename: HyperFET
Package / Case: TO-247-3
Id - Continuous Drain Current: 100 A
Rise Time: 250 ns
Vgs - Gate-Source Voltage: 30 V
Transistor Type: 1 N-Channel
ECCN EAR99
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