IXFB100N50Q3 | ||
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产品描述:
Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
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标准包装:1 | ||
数据手册: |
Number of Channels: | 1 Channel |
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Rds On - Drain-Source Resistance: | 49 mOhms |
Manufacturer: | IXYS |
Pd - Power Dissipation: | 1.56 kW |
Factory Pack Quantity: | 25 |
Brand: | IXYS |
RoHS: | Details |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Configuration: | Single |
Unit Weight: | 0.056438 oz |
Mounting Style: | Through Hole |
Packaging: | Tube |
Qg - Gate Charge: | 255 nC |
Series: | IXFB100N50 |
Transistor Polarity: | N-Channel |
Technology: | Si |
Tradename: | HyperFET |
Package / Case: | TO-247-3 |
Id - Continuous Drain Current: | 100 A |
Rise Time: | 250 ns |
Vgs - Gate-Source Voltage: | 30 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
数据手册: |
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