IXFA4N100P | ||
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产品描述:
N-Channel 1000 V 3.3 Ohm Power MOSFET - TO-263
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标准包装:50 | ||
数据手册: |
Width: | 10.41 mm |
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Rds On - Drain-Source Resistance: | 3.3 Ohms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | TO-252-3 |
Height: | 4.83 mm |
Unit Weight: | 0.056438 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 24 ns |
Forward Transconductance - Min: | 1.8 S |
Series: | IXFA4N100 |
Factory Pack Quantity: | 50 |
Brand: | IXYS |
RoHS: | Details |
Id - Continuous Drain Current: | 4 A |
Rise Time: | 36 ns |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Packaging: | Tube |
Qg - Gate Charge: | 26 nC |
Pd - Power Dissipation: | 150 W |
Tradename: | Polar, HiPerFET |
Vgs th - Gate-Source Threshold Voltage: | 6 V |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | SMD/SMT |
Fall Time: | 50 ns |
Length: | 9.65 mm |
Manufacturer: | IXYS |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 37 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 1000 V |
Type: | Polar HiPerFET Power MOSFET |
Maximum Operating Temperature: | + 150 C |
数据手册: |
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