IXFA4N100P
IXFA4N100P
  • 量产中
  • EAR99
产品描述:
N-Channel 1000 V 3.3 Ohm Power MOSFET - TO-263
标准包装:50
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Width: 10.41 mm
Rds On - Drain-Source Resistance: 3.3 Ohms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-252-3
Height: 4.83 mm
Unit Weight: 0.056438 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 24 ns
Forward Transconductance - Min: 1.8 S
Series: IXFA4N100
Factory Pack Quantity: 50
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: 4 A
Rise Time: 36 ns
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Tube
Qg - Gate Charge: 26 nC
Pd - Power Dissipation: 150 W
Tradename: Polar, HiPerFET
Vgs th - Gate-Source Threshold Voltage: 6 V
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 50 ns
Length: 9.65 mm
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 37 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 1000 V
Type: Polar HiPerFET Power MOSFET
Maximum Operating Temperature: + 150 C
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