IXFA3N120
IXFA3N120
  • 量产中
  • EAR99
产品描述:
Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
标准包装:800
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Width: 9.2 mm
Rds On - Drain-Source Resistance: 4.5 Ohms
Pd - Power Dissipation: 200 W
Tradename: HyperFET
Height: 4.5 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 18 ns
Length: 9.9 mm
Series: IXFA3N120
Factory Pack Quantity: 50
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: 3 A
Rise Time: 15 ns
Maximum Operating Temperature: + 150 C
Packaging: Tube
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TO-252-3
Configuration: Single
Unit Weight: 0.056438 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 17 ns
Manufacturer: IXYS
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 32 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 1200 V
Transistor Type: 1 N-Channel
ECCN EAR99
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库存信息2到货提醒

供应商编码:SP1027

线下原厂及原厂授权代理商库存,接单后需要再次确认价格和数量

$17.10844

142.0966797777249

查看价格阶梯

1+$17.10844
10+$15.4845
25+$15.3295
50+$15.17435
100+$12.78223
500+$9.5649
库存数量180库存更新于
2022-12-02
订货周期58Weeks
Supplier SPQ/MOQ800/1
库存地--
生产批次2222

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