| IXFA3N120 | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
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| 标准包装：1 | ||
| 数据手册： |
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| Width: | 9.2 mm |
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| Rds On - Drain-Source Resistance: | 4.5 Ohms |
| Pd - Power Dissipation: | 200 W |
| Tradename: | HyperFET |
| Height: | 4.5 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 18 ns |
| Length: | 9.9 mm |
| Series: | IXFA3N120 |
| Factory Pack Quantity: | 50 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 3 A |
| Rise Time: | 15 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-252-3 |
| Configuration: | Single |
| Unit Weight: | 0.056438 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 17 ns |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 32 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 1200 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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