IXFA12N50P specifications -Ameya360 electronic components purchase network


IXFA12N50P

ACTIVE EAR99
Product description : Single N-Channel 500 V 200 W 29 nC Surface Mount Power Mosfet - TO-263
SPQ：50
Datasheet : IXFA12N50P.pdf

Width:	4.83 mm
Rds On - Drain-Source Resistance:	500 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-252-3
Height:	16 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	SMD/SMT
Fall Time:	20 ns
Length:	10.66 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	65 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	500 V
Type:	Polar Power MOSFET HiPerFET
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Qg - Gate Charge:	29 nC
Pd - Power Dissipation:	200 W
Tradename:	Polar, HiPerFET
Vgs th - Gate-Source Threshold Voltage:	5.5 V
Configuration:	Single
Unit Weight:	0.056438 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	22 ns
Forward Transconductance - Min:	7.5 S
Series:	IXFA12N50P
Factory Pack Quantity:	50
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	12 A
Rise Time:	27 ns
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXFA12N50P.pdf

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Stock code :	561452
Mfg name :	IXYS Corporation
MPN :	IXFA12N50P
Product description :	Single N-Channel 500 V 200 W 29 nC Surface Mount Power Mosfet - TO-263

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