IXFA10N60P
IXFA10N60P
  • 量产中
  • TO-263 (IXFA)
  • EAR99
产品描述:
Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO263; 120ns
标准包装:1
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FET Feature Standard
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Part Status Active
Manufacturer IXYS
Series HiPerFET™, PolarP2™
Vgs(th) (Max) @ Id 5.5V @ 1mA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Tube
Rds On (Max) @ Id, Vgs 740 mOhm @ 5A, 10V
Power - Max 200W
Supplier Device Package TO-263 (IXFA)
Gate Charge (Qg) @ Vgs 32nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 1610pF @ 25V
ECCN EAR99
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