IXFA10N60P | ||
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产品描述:
Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO263; 120ns
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标准包装:1 | ||
数据手册: |
FET Feature | Standard |
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Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Part Status | Active |
Manufacturer | IXYS |
Series | HiPerFET™, PolarP2™ |
Vgs(th) (Max) @ Id | 5.5V @ 1mA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Packaging | Tube |
Rds On (Max) @ Id, Vgs | 740 mOhm @ 5A, 10V |
Power - Max | 200W |
Supplier Device Package | TO-263 (IXFA) |
Gate Charge (Qg) @ Vgs | 32nC @ 10V |
Category | Discrete Semiconductor Products |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | Transistors - FETs, MOSFETs - Single |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) @ Vds | 1610pF @ 25V |
ECCN | EAR99 |
数据手册: |
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