IXFA10N60P specifications -Ameya360 electronic components purchase network


IXFA10N60P

ACTIVE TO-263 (IXFA) EAR99
Product description : Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO263; 120ns
SPQ：1
Datasheet : IXFA10N60P.pdf

FET Feature	Standard
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Part Status	Active
Manufacturer	IXYS
Series	HiPerFET™, PolarP2™
Vgs(th) (Max) @ Id	5.5V @ 1mA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube
Rds On (Max) @ Id, Vgs	740 mOhm @ 5A, 10V
Power - Max	200W
Supplier Device Package	TO-263 (IXFA)
Gate Charge (Qg) @ Vgs	32nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	1610pF @ 25V
ECCN	EAR99

Datasheet： IXFA10N60P.pdf

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Stock code :	561448
Mfg name :	IXYS Corporation
MPN :	IXFA10N60P
Product description :	Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO263; 120ns

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