| IXDR30N120D1 | ||
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| 产品描述：
Transistor: IGBT; NPT; 1.2kV; 30A; 200W; ISOPLUS247™
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| 标准包装：30 | ||
| 数据手册： |
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| Collector-Emitter Saturation Voltage: | 2.4 V |
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| Packaging: | Tube |
| Minimum Operating Temperature: | - 55 C |
| Pd - Power Dissipation: | 200 W |
| Gate-Emitter Leakage Current: | 500 nA |
| Height: | 21.34 mm |
| Unit Weight: | 0.186952 oz |
| Continuous Collector Current Ic Max: | 60 A |
| Continuous Collector Current: | 50 A |
| Series: | IXDR30N120 |
| Brand: | IXYS |
| Product Category: | IGBT Transistors |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| ECCN | ECL99 |
| Width: | 5.21 mm |
| Continuous Collector Current at 25 C: | 50 A |
| Operating Temperature Range: | - 55 C to + 150 C |
| Tradename: | ISOPLUS |
| Package / Case: | ISOPLUS247-3 |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Length: | 16.13 mm |
| Manufacturer: | IXYS |
| Factory Pack Quantity: | 30 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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