| IXBX25N250 | ||
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| 产品描述：
Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Collector-Emitter Saturation Voltage: | 3.3 V |
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| Continuous Collector Current Ic Max: | 55 A |
| Manufacturer: | IXYS |
| Minimum Operating Temperature: | - 55 C |
| Factory Pack Quantity: | 30 |
| Brand: | IXYS |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | +/- 100 nA |
| Collector- Emitter Voltage VCEO Max: | 2.5 kV |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| Width: | 5.21 mm |
| Length: | 16.13 mm |
| Pd - Power Dissipation: | 300 W |
| Continuous Collector Current at 25 C: | 55 A |
| Technology: | Si |
| Tradename: | BIMOSFET |
| Package / Case: | TO-247-3 |
| Product Category: | IGBT Transistors |
| Height: | 21.34 mm |
| Unit Weight: | 0.056438 oz |
| Maximum Operating Temperature: | + 150 C |
| ECCN | EAR99 |
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