IXBT10N170 specifications -Ameya360 electronic components purchase network


IXBT10N170

ACTIVE TO-268 EAR99
Product description : Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268
SPQ：1
Datasheet : IXBT10N170.pdf

Current - Collector Pulsed (Icm)	40A
Power - Max	140W
Supplier Device Package	TO-268
Current - Collector (Ic) (Max)	20A
Category	Discrete Semiconductor Products
Reverse Recovery Time (trr)	360ns
Voltage - Collector Emitter Breakdown (Max)	1700V
Family	Transistors - IGBTs - Single
Vce(on) (Max) @ Vge, Ic	3.8V @ 15V, 10A
Input Type	Standard
ECCN	EAR99
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Test Condition	1360V, 10A, 56 Ohm, 15V
Td (on/off) @ 25°C	35ns/500ns
Part Status	Active
Manufacturer	IXYS
Gate Charge	30nC
Series	BIMOSFET™
Mounting Type	Surface Mount
Switching Energy	6mJ (off)
Packaging	Tube

Datasheet： IXBT10N170.pdf

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Stock code :	561359
Mfg name :	IXYS Corporation
MPN :	IXBT10N170
Product description :	Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268

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