IXBT10N170
IXBT10N170
  • 量产中
  • TO-268
  • EAR99
产品描述:
Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268
标准包装:1
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Current - Collector Pulsed (Icm) 40A
Power - Max 140W
Supplier Device Package TO-268
Current - Collector (Ic) (Max) 20A
Category Discrete Semiconductor Products
Reverse Recovery Time (trr) 360ns
Voltage - Collector Emitter Breakdown (Max) 1700V
Family Transistors - IGBTs - Single
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 10A
Input Type Standard
ECCN EAR99
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Test Condition 1360V, 10A, 56 Ohm, 15V
Td (on/off) @ 25°C 35ns/500ns
Part Status Active
Manufacturer IXYS
Gate Charge 30nC
Series BIMOSFET™
Mounting Type Surface Mount
Switching Energy 6mJ (off)
Packaging Tube
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