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| 产品描述：
Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
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| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
- 产品特性
- 技术文档
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| Current - Collector Pulsed (Icm) | 100A |
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| Power - Max | 160W |
| Current - Collector (Ic) (Max) | 30A |
| Category | Discrete Semiconductor Products |
| Reverse Recovery Time (trr) | 1.4µs |
| Voltage - Collector Emitter Breakdown (Max) | 3000V |
| Family | Transistors - IGBTs - Single |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 12A |
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AD (IXBH) |
| Part Status | Active |
| Manufacturer | IXYS |
| Gate Charge | 62nC |
| Series | BIMOSFET™ |
| Mounting Type | Through Hole |
| Input Type | Standard |
| ECCN | EAR99 |
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