IXBF40N160
IXBF40N160
  • 量产中
  • EAR99
产品描述:
Transistor: IGBT; BiMOSFET™; 1.6kV; 16A; 250W
标准包装:1
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Collector-Emitter Saturation Voltage: 6.2 V
Packaging: Tube
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 250 W
Gate-Emitter Leakage Current: 500 nA
Height: 20.88 mm
Mounting Style: Through Hole
Length: 19.91 mm
Manufacturer: IXYS
Factory Pack Quantity: 25
RoHS:  Details
Collector- Emitter Voltage VCEO Max: 1.6 kV
Maximum Operating Temperature: + 150 C
Width: 5.03 mm
Continuous Collector Current at 25 C: 28 A
Operating Temperature Range: - 55 C to + 150 C
Tradename: BIMOSFET
Package / Case: ISOPLUS i4-PAC-3
Configuration: Single
Continuous Collector Current Ic Max: 40 A
Continuous Collector Current: 28 A
Series: IXBF40N160
Brand: IXYS
Product Category: IGBT Transistors
Maximum Gate Emitter Voltage: +/- 20 V
ECCN EAR99
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