IRLML6302TRPBF
IRLML6302TRPBF
  • ACTIVE
  • EAR99
Product description : Single P-Channel 20 V 0.6 Ohm 2.4 nC HEXFET® Power Mosfet - MICRO-3
SPQ：1
Datasheet :
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Rds On - Drain-Source Resistance: 600 mOhms
Product: MOSFET Small Signal
Qg - Gate Charge: 2.4 nC
Pd - Power Dissipation: 540 mW
Factory Pack Quantity: 3000
Brand: Infineon Technologies
Package / Case: SOT-23-3
Id - Continuous Drain Current: - 620 mA
Vgs - Gate-Source Voltage: 12 V
Transistor Type: 1 P-Channel
ECCN EAR99
Packaging: Reel
Number of Channels: 1 Channel
Manufacturer: Infineon
Transistor Polarity: P-Channel
Technology: Si
RoHS:  Details
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 20 V
Unit Weight: 0.050717 oz
Mounting Style: SMD/SMT
Datasheet：
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  • P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
  • Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
  • Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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