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| 产品描述：
Single N-Channel 100 V 185 mOhm 13.3 nC HEXFET® Power Mosfet - DPAK
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| 标准包装：1 | ||
| 数据手册： |
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| Number of Channels: | 1 Channel |
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| Rds On - Drain-Source Resistance: | 265 mOhms |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Unit Weight: | 0.139332 oz |
| Mounting Style: | SMD/SMT |
| Packaging: | Reel |
| Qg - Gate Charge: | 13.3 nC |
| Pd - Power Dissipation: | 39 W |
| Factory Pack Quantity: | 3000 |
| Brand: | Infineon / IR |
| Package / Case: | TO-252-3 |
| Id - Continuous Drain Current: | 11 A |
| Vgs - Gate-Source Voltage: | 16 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
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