IRL3103STRLPBF specifications -Ameya360 electronic components purchase network


IRL3103STRLPBF

ACTIVE EAR99
Product description : Single N-Channel 30 V 12 mOhm 33 nC HEXFET® Power Mosfet - D2PAK
SPQ：1
Datasheet : IRL3103STRLPBF.pdf

Packaging:	Reel
Qg - Gate Charge:	22 nC
Pd - Power Dissipation:	110 W
Package / Case:	TO-252-3
Vgs - Gate-Source Voltage:	16 V
Mounting Style:	SMD/SMT
Fall Time:	9.1 ns
Manufacturer:	Infineon
Factory Pack Quantity:	800
Brand:	Infineon / IR
RoHS:	Details
Id - Continuous Drain Current:	64 A
Rise Time:	120 ns
Type:	HEXFET Power MOSFET
ECCN	EAR99
Rds On - Drain-Source Resistance:	16 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Configuration:	Single
Unit Weight:	0.139332 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	8.9 ns
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	14 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	30 V
Transistor Type:	1 N-Channel
Maximum Operating Temperature:	+ 175 C

Datasheet： IRL3103STRLPBF.pdf

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Stock code :	558431
Mfg name :	Infineon Technologies
MPN :	IRL3103STRLPBF
Product description :	Single N-Channel 30 V 12 mOhm 33 nC HEXFET® Power Mosfet - D2PAK

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