IRFU430APBF
  • ACTIVE
  • EAR99
Product description : IRFU430A Series N-Channel 500 V 2 Ohm 110 W Power Mosfet - IPAK (TO-251)
SPQ:1
Datasheet : --
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Width: 2.39 mm
Rds On - Drain-Source Resistance: 1.7 Ohms
Pd - Power Dissipation: 110 W
Package / Case: TO-251-3
Configuration: Single
Unit Weight: 0.011640 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 8.7 ns
Manufacturer: Vishay
Factory Pack Quantity: 3000
Brand: Vishay Semiconductors
RoHS:  Details
Id - Continuous Drain Current: 5 A
Rise Time: 27 ns
Maximum Operating Temperature: + 150 C
Packaging: Tube
Minimum Operating Temperature: - 55 C
Technology: Si
Height: 6.22 mm
Vgs - Gate-Source Voltage: 30 V
Mounting Style: Through Hole
Fall Time: 16 ns
Length: 6.73 mm
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 17 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 500 V
Transistor Type: 1 N-Channel
ECCN EAR99
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