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| 产品描述：
Single N-Channel 60V 2.4 mOhm 186 nC HEXFET® Power Mosfet - D2PAK
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET®, StrongIRFET™ |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 100A, 10V |
| Power - Max | 294W |
| Supplier Device Package | D²PAK (TO-263AB) |
| Gate Charge (Qg) @ Vgs | 279nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 10034pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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