Packaging: | Tube |
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Qg - Gate Charge: | 18 nC |
Pd - Power Dissipation: | 86 W |
Package / Case: | TO-252-3 |
Vgs - Gate-Source Voltage: | 30 V |
Mounting Style: | SMD/SMT |
Fall Time: | 9.3 ns |
Manufacturer: | Infineon |
Factory Pack Quantity: | 75 |
Brand: | Infineon Technologies |
RoHS: | Details |
Id - Continuous Drain Current: | 9.4 A |
Rise Time: | 16 ns |
Type: | Smps Mosfet |
Rds On - Drain-Source Resistance: | 380 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Configuration: | Single |
Unit Weight: | 0.139332 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 7.5 ns |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 13 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Transistor Type: | 1 N-Channel |
Maximum Operating Temperature: | + 175 C |
数据手册: |
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