IRFR9120NTRLPBF specifications -Ameya360 electronic components purchase network


IRFR9120NTRLPBF

ACTIVE EAR99
Product description : Single P-Channel 100V 0.48 Ohm 27 nC HEXFET® Power Mosfet - TO-252AA
SPQ：1
Datasheet : IRFR9120NTRLPBF.pdf

Number of Channels:	1 Channel
Rds On - Drain-Source Resistance:	480 mOhms
Manufacturer:	Infineon
Transistor Polarity:	P-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 100 V
Unit Weight:	0.139332 oz
Mounting Style:	SMD/SMT
Packaging:	Reel
Qg - Gate Charge:	18 nC
Pd - Power Dissipation:	39 W
Factory Pack Quantity:	3000
Brand:	Infineon Technologies
Package / Case:	TO-252-3
Id - Continuous Drain Current:	- 6.5 A
Vgs - Gate-Source Voltage:	20 V
Transistor Type:	1 P-Channel
ECCN	EAR99

Datasheet： IRFR9120NTRLPBF.pdf

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Stock code :	558268
Mfg name :	Infineon Technologies
MPN :	IRFR9120NTRLPBF
Product description :	Single P-Channel 100V 0.48 Ohm 27 nC HEXFET® Power Mosfet - TO-252AA

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