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| 产品描述：
Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
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| 标准包装：1 | ||
| 数据手册： |
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| Number of Channels: | 1 Channel |
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| Typical Turn-On Delay Time: | 16 ns |
| Forward Transconductance - Min: | 280 S |
| Qg - Gate Charge: | 300 nC |
| Pd - Power Dissipation: | 375 W |
| Factory Pack Quantity: | 25 |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Rise Time: | 182 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Fall Time: | 189 ns |
| Packaging: | Tube |
| Rds On - Drain-Source Resistance: | 2.5 MOhms |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Typical Turn-Off Delay Time: | 118 ns |
| Package / Case: | TO-247-3 |
| Id - Continuous Drain Current: | 195 A |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Unit Weight: | 1.340411 oz |
| Mounting Style: | Through Hole |
| 数据手册： |
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