Packaging: | Tube |
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Qg - Gate Charge: | 186 nC |
Pd - Power Dissipation: | 294 W |
Package / Case: | TO-220-3 |
Configuration: | Single |
Unit Weight: | 0.211644 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 20 ns |
Manufacturer: | Infineon |
Factory Pack Quantity: | 50 |
Typical Turn-Off Delay Time: | 118 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Rds On - Drain-Source Resistance: | 2 MOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Vgs th - Gate-Source Threshold Voltage: | 3.7 V |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | Through Hole |
Fall Time: | 93 ns |
Forward Transconductance - Min: | 498 S |
Transistor Polarity: | N-Channel |
Brand: | Infineon Technologies |
RoHS: | Details |
Id - Continuous Drain Current: | 195 A |
Rise Time: | 134 ns |
Maximum Operating Temperature: | + 175 C |
数据手册: |
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