IRF8301MTRPBF specifications -Ameya360 electronic components purchase network


IRF8301MTRPBF

ACTIVE DIRECTFET™ MT EAR99
Product description : Single N-Channel 30 V 1.5 mOhm 51 nC HEXFET® Power Mosfet - DirectFET®
SPQ：1
Datasheet : IRF8301MTRPBF.pdf

FET Feature	Standard
Package / Case	DirectFET™ Isometric MT
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	27A (Ta), 34A (Tc)
Part Status	Active
Manufacturer	Infineon Technologies
Series	HEXFET®
Vgs(th) (Max) @ Id	2.35V @ 150µA
Operating Temperature	-40°C ~ 150°C (TJ)
Packaging	Cut Tape (CT)
Rds On (Max) @ Id, Vgs	1.5 mOhm @ 32A, 10V
Power - Max	2.8W
Supplier Device Package	DIRECTFET™ MT
Gate Charge (Qg) @ Vgs	77nC @ 4.5V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	6140pF @ 15V
ECCN	EAR99

Datasheet： IRF8301MTRPBF.pdf

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Stock code :	557938
Mfg name :	Infineon Technologies
MPN :	IRF8301MTRPBF
Product description :	Single N-Channel 30 V 1.5 mOhm 51 nC HEXFET® Power Mosfet - DirectFET®

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