IRF7779L2TRPBF specifications -Ameya360 electronic components purchase network


IRF7779L2TRPBF

ACTIVE DIRECTFET L8 EAR99
Product description : Single N-Channel 150 V 11 mOhm 97 nC HEXFET® Power Mosfet - DirectFET®
SPQ：1
Datasheet : IRF7779L2TRPBF.pdf

FET Feature	Standard
Package / Case	DirectFET™ Isometric L8
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	375A (Tc)
Part Status	Active
Manufacturer	Infineon Technologies
Series	HEXFET®
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Packaging	Cut Tape (CT)
Rds On (Max) @ Id, Vgs	11 mOhm @ 40A, 10V
Power - Max	3.3W
Supplier Device Package	DIRECTFET L8
Gate Charge (Qg) @ Vgs	150nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	6660pF @ 25V
ECCN	EAR99

Datasheet： IRF7779L2TRPBF.pdf

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Stock code :	557922
Mfg name :	Infineon Technologies
MPN :	IRF7779L2TRPBF
Product description :	Single N-Channel 150 V 11 mOhm 97 nC HEXFET® Power Mosfet - DirectFET®

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