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| 产品描述：
Single N-Channel 60 V 2.2 mOhm 146 nC HEXFET® Power Mosfet - DirectFET®
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| 标准包装：4000 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| FET Feature | Standard |
|---|---|
| Package / Case | DirectFET™ Isometric L6 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 148A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 8075pF @ 50V |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 89A, 10V |
| Power - Max | 3.3W |
| Supplier Device Package | DIRECTFET L6 |
| Gate Charge (Qg) @ Vgs | 220nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Cut Tape (CT) |
| 数据手册： |
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