| IRF7317PBF | ||
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| 产品描述：
IRF7317PBF, 双 N/P沟道 MOSFET 晶体管, Vds=20 V, 8针 SOIC封装
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| 标准包装：3800 | ||
| 数据手册： |
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| Packaging: | Tube |
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| Qg - Gate Charge: | 18 nC |
| Pd - Power Dissipation: | 2 W |
| Package / Case: | SOIC-8 |
| Vgs - Gate-Source Voltage: | 12 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 31 ns, 49 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 95 |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Id - Continuous Drain Current: | 6.6 A |
| Rise Time: | 17 ns, 40 ns |
| Type: | Power Mosfet |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 29 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Configuration: | Dual Dual Drain |
| Unit Weight: | 0.019048 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 8.1 ns, 15 ns |
| Transistor Polarity: | N-Channel, P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 38 ns, 42 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Maximum Operating Temperature: | + 150 C |
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