IRF1404ZSTRLPBF specifications -Ameya360 electronic components purchase network


IRF1404ZSTRLPBF

ACTIVE EAR99
Product description : Single N-Channel 40V 3.7 mOhm 150 nC HEXFET® Power Mosfet - D2PAK
SPQ：1
Datasheet : IRF1404ZSTRLPBF.pdf

Number of Channels:	1 Channel
Rds On - Drain-Source Resistance:	2.7 mOhms
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	40 V
Unit Weight:	0.139332 oz
Mounting Style:	SMD/SMT
Packaging:	Reel
Qg - Gate Charge:	100 nC
Pd - Power Dissipation:	220 W
Factory Pack Quantity:	800
Brand:	Infineon / IR
Package / Case:	TO-252-3
Id - Continuous Drain Current:	190 A
Vgs - Gate-Source Voltage:	20 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IRF1404ZSTRLPBF.pdf

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Stock code :	557796
Mfg name :	Infineon Technologies
MPN :	IRF1404ZSTRLPBF
Product description :	Single N-Channel 40V 3.7 mOhm 150 nC HEXFET® Power Mosfet - D2PAK

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