| IPW90R1K0C3 | ||
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| Product description : 900V,5.7A,N channel Power MOSFET | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
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| Width: | 5.16 mm |
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| Rds On - Drain-Source Resistance: | 1 Ohms |
| Pd - Power Dissipation: | 89 W |
| Tradename: | CoolMOS |
| Height: | 21.1 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 35 ns |
| Length: | 16.03 mm |
| Series: | CoolMOS C3 |
| Factory Pack Quantity: | 240 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 400 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Transistor Type: | 1 N-Channel |
| Packaging: | Tube |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Unit Weight: | 1.340411 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 70 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | IPW90R1K0C3FKSA1 IPW90R1K0C3XK SP000413752 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 5.7 A |
| Rise Time: | 20 ns |
| Maximum Operating Temperature: | + 150 C |
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