IPP037N08N3GXKSA1 specifications -Ameya360 electronic components purchase network


IPP037N08N3GXKSA1

ACTIVE EAR99
Product description : Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
SPQ：1
Datasheet : IPP037N08N3GXKSA1.pdf

Number of Channels:	1 Channel
Rds On - Drain-Source Resistance:	3.5 mOhms
Series:	IPP037N08
Minimum Operating Temperature:	- 55 C
Factory Pack Quantity:	500
Brand:	Infineon Technologies
Tradename:	OptiMOS
Package / Case:	TO-220-3
Id - Continuous Drain Current:	100 A
Configuration:	Single
Unit Weight:	0.211644 oz
Mounting Style:	Through Hole
ECCN	EAR99
Packaging:	Tube
Manufacturer:	Infineon
Pd - Power Dissipation:	214 W
Transistor Polarity:	N-Channel
Technology:	Si
Part # Aliases:	G IPP037N08N3 IPP037N08N3GXK SP000680776
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	80 V
Vgs - Gate-Source Voltage:	20 V
Transistor Type:	1 N-Channel
Maximum Operating Temperature:	+ 175 C

Datasheet： IPP037N08N3GXKSA1.pdf

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Stock code :	557372
Mfg name :	Infineon Technologies
MPN :	IPP037N08N3GXKSA1
Product description :	Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3

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