| IPP037N08N3GXKSA1 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Number of Channels: | 1 Channel |
|---|---|
| Rds On - Drain-Source Resistance: | 3.5 mOhms |
| Series: | IPP037N08 |
| Minimum Operating Temperature: | - 55 C |
| Factory Pack Quantity: | 500 |
| Brand: | Infineon Technologies |
| Tradename: | OptiMOS |
| Package / Case: | TO-220-3 |
| Id - Continuous Drain Current: | 100 A |
| Configuration: | Single |
| Unit Weight: | 0.211644 oz |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
| Packaging: | Tube |
| Manufacturer: | Infineon |
| Pd - Power Dissipation: | 214 W |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Part # Aliases: | G IPP037N08N3 IPP037N08N3GXK SP000680776 |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：