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| 产品描述： | ||
| 标准包装：500 | ||
| 数据手册： -- | ||
| ECAD模型:
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| Packaging: | Tube |
|---|---|
| Qg - Gate Charge: | 106 nC |
| Pd - Power Dissipation: | 214 W |
| Package / Case: | TO-220-3 |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 24 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 51 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Transistor Type: | 1 N-Channel |
| Rds On - Drain-Source Resistance: | 2 MOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 19 ns |
| Forward Transconductance - Min: | 210 S / 100 S |
| Series: | XPP020N06 |
| Factory Pack Quantity: | 500 |
| Part # Aliases: | IPP020N06NAKSA1 IPP020N06NXK SP000917406 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 120 A |
| Rise Time: | 45 ns |
| Maximum Operating Temperature: | + 175 C |
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