IPI147N12N3 G specifications -Ameya360 electronic components purchase network

Packaging:	Tube
Qg - Gate Charge:	37 nC
Pd - Power Dissipation:	107 W
Tradename:	OptiMOS
Configuration:	Single
Unit Weight:	0.084199 oz
Number of Channels:	1 Channel
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	24 nS
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	120 V
Transistor Type:	1 N-Channel
Rds On - Drain-Source Resistance:	14.7 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-262-3
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	4 ns
Series:	OptiMOS 3
Factory Pack Quantity:	500
Part # Aliases:	IPI147N12N3GAKSA1 IPI147N12N3GXK SP000652744
RoHS:	Details
Id - Continuous Drain Current:	56 A
Rise Time:	9 ns
Maximum Operating Temperature:	+ 175 C

Datasheet： IPI147N12N3 G.pdf

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