| IPD30N03S4L-09 | ||
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| 产品描述：
MOSFET N-CH 30V 30A TO252-3
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| 标准包装：2500 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
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| Width: | 6.22 mm |
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| Rds On - Drain-Source Resistance: | 9 mOhms |
| Pd - Power Dissipation: | 42 W |
| Tradename: | OptiMOS |
| Height: | 2.15 mm |
| Vgs - Gate-Source Voltage: | 16 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 5 ns |
| Length: | 6.5 mm |
| Series: | OptiMOS-T2 |
| Factory Pack Quantity: | 2500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 12 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 1 N-Channel |
| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-252-3 |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 3 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | IPD30N03S4L09ATMA1 IPD30N03S4L09XT SP000415578 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 30 A |
| Rise Time: | 1 ns |
| Maximum Operating Temperature: | + 175 C |
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